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BAV74LT1 Monolithic Dual Switching Diode
Features
* Pb-Free Packages are Available
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ANODE 1 2 ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 50 200 500 Unit Vdc mAdc mAdc
3 CATHODE
3 1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 -55 to +150 mW mW/C C/W C JA M G G 1 556 mW mW/C C/W SOT-23 CASE 318 STYLE 9 Max Unit
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
JA = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device BAV74LT1 BAV74LT1G BAV74LT3 BAV74LT3G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
March, 2006 - Rev. 4
Publication Order Number: BAV74LT1/D
BAV74LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 5.0 mAdc) Reverse Voltage Leakage Current, (Note 3) (VR = 50 Vdc, TJ = 125C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 W) 3. For each individual diode while the second diode is unbiased. V(BR) IR - - CD VF trr - - - 100 0.1 2.0 1.0 4.0 pF Vdc ns 50 - Vdc mAdc Symbol Min Max Unit
Curves Applicable to Each Anode
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = -40C IR , REVERSE CURRENT (A) 10
TA = 150C TA = 125C
1.0
0.1
TA = 85C TA = 55C
1.0
TA = 25C
0.01 TA = 25C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 1. Forward Voltage
Figure 2. Leakage Current
1.0 CD, DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
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2
BAV74LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
3 SEE VIEW C
E
1 2
HE c b e q 0.25
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
A L A1 L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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BAV74LT1/D

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